Atomic layer deposition (ALD) is an advanced bottom-up nanofabrication technique that enables the precise deposition of thin, uniform, and defect-free films, offering precise control over their properties. In our group, we specialize in growing various ultra-thin metal oxides and oxysulfides to be utilized as buffer layers in optoelectronic devices.

Our research primarily focuses on investigating the influence of these buffer layers on charge transport facilitation and ion migration inhibition within these devices. By harnessing the capabilities of ALD, we aim to optimize the performance and functionality of optoelectronic devices through careful design and engineering of these buffer layers.